| PART |
Description |
Maker |
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC
From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| EN25D16 EN25D16-100FI EN25D16-100FIP EN25D16-100HI |
16 Megabit Serial Flash Memory
|
Eon Silicon Solution Inc.
|
| AT49F080 AT49F080-12CC AT49F080-12CI AT49F080-12RC |
8-Megabit 1M x 8 5-volt Only Flash Memory 1M X 8 FLASH 5V PROM, 120 ns, PDSO40
8-Megabit (1M x 8) 5-volt ohly flash memory, 50mA active current, 0.3mA standbgy current
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| EN25T16A |
16 Megabit Uniform Sector, Serial Flash Memory
|
Eon Silicon Solution In...
|
| EN25Q32B EN25Q32B-104BBIP EN25Q32B-104FIP EN25Q32B |
32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
|
Eon Silicon Solution Inc.
|
| EN25S32-104RIP EN25S32-104WIP |
32 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
|
Eon Silicon Solution Inc.
|
| AT25DF161-MH-T AT25DF161-MH-Y AT25DF161-SH-B AT25D |
16-Megabit 2.7-volt Minimum SPI Serial Flash Memory
|
http://
ATMEL Corporation
|
| EN25S20-75XIP EN25S20-75GIP |
2 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
|
Eon Silicon Solution Inc.
|
| EN25Q40-100XIP EN25Q4011 EN25Q40-100GIP |
4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
|
Eon Silicon Solution Inc.
Eon Silicon Solution In...
|
